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John
has published over 100 articles in refereed scientific journals.
In the area of semiconductor (optical, e-beam, ion-beam, and
x-ray) lithography he has published 41 papers. Some representative
examples include:
“Reduction
of Mask Induced CD Errors by Optical Proximity Correction”,
John Randall, Alexander Tritchkov, Kurt Ronse, Rik Jonckheere,
SPIE vol 3334 page 124-130 (1998)
“Fifteen
nanometer features by sidewall processing and pattern transfer”
John N. Randall and Brian L. Newell, J.Vac.Sci.Technol.
B12, 3631 (1994)
“Prospects
for Printing Very Large Scale Integration Circuits with
Masked Ion Beam Lithography”, J. N. Randall, J.Vac.Sci.Technol.
Vol A4, p.777, (1986)
In
the area of quantum devices and circuits he has published approximately
50 papers. Some examples include:
“Potential
Nanoelectronic Integrated Circuit Technologies”, John
Randall, Gary Frazier, Alan Seabaugh, Tom Broekaert, Microelectronics
Engineering 32 15-30, 1996
“Resonant
Tunneling Quantum Dot Diodes: Physics, Limitations, and
Technological Prospects” James H. Luscombe, John N.
Randall, and Ann Marie Bouchard, Proceedings of IEEE, vol
79, 1117, 1991
“Observation
of Discrete Electronic States in a Zero-Dimensional Semiconductor
Nanostructure”, M.A. Reed, J.N. Randall, R.J. Aggarwal,
R.J. Matyi, T.M. Moore, and A.E. Wetsel, Phys.Rev.Lett.
60, 535 (1988)
He
has also published papers on metrology, ohmic contacts, atomic
layer epitaxy, reactive ion etching, micro electro mechanical
systems (MEMS), and x-ray fluorescence analysis.
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